sot - 89 - 3l 1. base 2. collector 3. emitter features ? npn complemen t to bc868 ? low voltage ? high current maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base br eakdown voltage v (br) cbo i c = - 1 0 0 a ,i e =0 - 32 v c ollector - emitter breakdown voltage v (br) ceo i c = - 1 ma , i b =0 - 20 v emitter - base breakdown voltage v (br) e b o i e = - 1 0 0 a ,i c =0 - 5 v collector cut - off current i cbo v cb = - 25 v,i e =0 - 0.1 a emitter cut - off curr ent i ebo v e b = - 5 v,i c =0 - 0.1 a h fe (1) v ce = - 10 v , i c = - 5m a 50 h fe (2) v ce = - 1 v , i c = - 0.5 a 100 375 dc current gain h fe (3) v ce = - 1 v , i c = - 1 a 60 collector - emitter saturation voltage v ce(sat) i c = - 1 a ,i b = - 0.1 a - 0.5 v v ce = - 1 v , i c = - 1 a - 1 v base - emitter voltage v b e v ce = - 10 v , i c = - 5m a - 0.62 v transition frequency f t v ce = - 5 v,i c = - 10m a , f=1 00 mhz 40 mhz classification of h fe (2) rank BC869 BC869 - 16 BC869 - 25 range 100 C 375 100 C 250 160 C 375 marking cec cgc chc symbol parameter value unit v cbo collector - b ase v oltage - 32 v v ceo collector - e mitter v oltage - 20 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - 1 a p c collector p ower d issipation 500 m w r ja thermal resistance from junction to ambient 250 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 BC869 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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